STPS5L60 datasheet(3/5 Pages) STMICROELECTRONICS

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STPS5L60

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

VR(V)

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

IR(mA)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

100

1000

100

VR(V)

F=1MHz

Vosc=30mV

Tj=25°C

C(pF)

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

Ta=25°C

Ta=50°C

Ta=100°C

δ=0.5

IM(A)

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

Zth(j-a)/Rth(j-a)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration.

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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