STB22NS25Z - STP22NS25Z

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

Rise time

(see Figure 12)

20

30

ns

ns

Turn-off- delay time

Fall time

(see Figure 12)

100

78

ns

ns

Off-voltage rise time

Fall time

Cross-over time

(see Figure 12)

37

65

110

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

22

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

88

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see Figure 17)

292

3065

21

ns

nC

A

Table 8.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components

Gate-source breakdown

voltage

Igs=± 500µA (open drain)

20

V