STPS60L30CW datasheet(3/4 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

100

150

200

250

300

350

400

450

500

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

t(s)

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values) (per

diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

δ=0.1

δ=0.2

δ=0.5

Single pulse

tp(s)

δ=tp/T

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

2E+3

IR(mA)

Tj=125°C

Tj=25°C

Tj=150°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values) (per diode).

C(nF)

F=1MHz

Tj=25°C

VR(V)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values) (per diode).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

100

200

IFM(A)

Tj=150°C

(typical values)

Tj=125°C

Tj=25°C

VFM(V)

Fig. 7: Forward voltage drop versus forward

current (maximum values - per diode).

STPS60L30CW

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