2SK435 datasheet(2/6 Pages) RENESAS

2 / 6 page

2SK435

Rev.2.00 Aug 10, 2005 page 2 of 5

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

Gate to source voltage

VGSO

–22

Drain current

100

Gate current

Channel power dissipation

Pch

300

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Gate to source breakdown voltage

V(BR)GSS

–22

—

IG = –10

µA, VDS = 0

Gate cutoff current

IGSS

—

–10

VGS = –15 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

—

–2.5

VDS = 5 V, ID = 10

µA

Drain current

IDSS*

—

VDS = 5 V, VGS = 0, Pulse test

Forward transfer admittance

|yfs|

—

VDS = 5 V, ID = 10 mA,

f = 1kHz

Input capacitance

Ciss

—

9.0

11.0

VDS = 5 V, VGS = 0,

f = 1MHz

Reverse transfer capacitance

Crss

—

2.8

4.0

VDS = 5 V, VGS = 0,

f = 1MHz

Noise figure

—

0.5

3.0

VDS = 5 V, ID = 1 mA,

f = 1kHz, Rg = 1k

Ω

Note:

1. The 2SK435 is grouped by IDSS as follows.

Grade

IDSS

12 to 22

18 to 30

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