STPS8L30H datasheet(3/4 Pages) STMICROELECTRONICS

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STPS8L30H

3/4

1E-3

1E-2

1E-1

1E+0

100

120

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

t(s)

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4: Relative variation of thermal impedance

junction to ambient versus pulse duration.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

3E+2

IR(mA)

Tj=125°C

Tj=25°C

Tj=150°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values).

110

100

200

500

1000

2000

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

VFM(V)

IFM(A)

Typical values

Tj=150°C

Tj=25°C

Tj=125°C

Fig. 7: Forward voltage drop versus forward cur-

rent (maximum values).

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