STS1NC60 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STS1NC60

Description	N-CHANNEL 600V - 12ohm - 0.3A - SO-8 PowerMESH™ II MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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July 2001

STS1NC60

N-CHANNEL 600V - 12

Ω - 0.3A - SO-8

PowerMESH™II MOSFET

(1)ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

s

TYPICAL RDS(on) = 12Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

AC ADAPTORS AND BATTERY CHARGERS

s

SWITH MODE POWER SUPPLIES (SMPS)

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

.

TYPE

VDSS

RDS(on)

ID

STS1NC60

600 V

< 15

Ω

0.3 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

0.3

A

ID

Drain Current (continuos) at TC = 100°C

0.18

A

IDM (q)

Drain Current (pulsed)

1.2

A

PTOT

Total Dissipation at TC = 25°C

2.5

W

Derating Factor

0.02

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–60 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

SO-8

INTERNAL SCHEMATIC DIAGRAM

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