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2SK2425 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SK2425
Description  Silicon N Channel MOS FET
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2425 Datasheet(HTML) 3 Page - Renesas Technology Corp

  2SK2425 Datasheet HTML 1Page - Renesas Technology Corp 2SK2425 Datasheet HTML 2Page - Renesas Technology Corp 2SK2425 Datasheet HTML 3Page - Renesas Technology Corp 2SK2425 Datasheet HTML 4Page - Renesas Technology Corp 2SK2425 Datasheet HTML 5Page - Renesas Technology Corp 2SK2425 Datasheet HTML 6Page - Renesas Technology Corp 2SK2425 Datasheet HTML 7Page - Renesas Technology Corp  
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2SK2425
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
1
3
10
100
300
1000
0.1
0.3
1
3
10
30
100
30
PW
=
10
ms
(1
shot)
DC
Operat
ion
(Tc
=
25
°C)
10
µs
100
µs
1 ms
Ta = 25
°C
Maximum Safe Operation Area
Operation in this area
is limited by R
DS(on)
Drain to Source Voltage VDS (V)
0
2
4
6
8
10
14
8
12
16
20
Pulse Test
5.5 V
5 V
4.5 V
10 V
6 V
VGS = 4 V
Typical Output Characteristics
Gate to Source Voltage VGS (V)
2
4
6
8
10
02
6
8
10
Tc = 75
°C
25
°C
– 25
°C
VDS = 10 V
Pulse Test
4
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
2
4
6
8
10
04
8
12
16
20
Pulse Test
5 A
2 A
ID = 10 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.2
0.5
1
2
5
20
10
0.05
0.1
0.2
0.5
2
5
Drain Current ID (A)
1
Pulse Test
15 V
VGS = 10 V
Static Drain to Source on State Resistance
vs. Drain Current
30
20
10
50
100
150
0



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