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M306V2EEFS Datasheet(PDF) 262 Page - Renesas Technology Corp |
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M306V2EEFS Datasheet(HTML) 262 Page - Renesas Technology Corp |
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262 / 271 page  Rev.1.40 Oct 06, 2004 page 262 of 269 M306V2ME-XXXFP, M306V2EEFP BCLK CSi td(BCLK–CS) 35ns.max 35ns.max ALE 35ns.max –4ns.min RD 35ns.max th(BCLK–RD) 0ns.min th(BCLK–AD) 4ns.min th(BCLK–CS) 4ns.min Hi–Z DB th(RD–DB) 0ns.min 0ns.min th(RD–CS) 0ns.min th(RD–AD) ADi BHE tcyc Read timing BCLK CSi td(BCLK–CS) 35ns.max td(BCLK–AD) 35ns.max ALE 35ns.max th(BCLK–ALE) –4ns.min 35ns.max th(BCLK–WR) 0ns.min 4ns.min th(BCLK–CS) 4ns.min Hi-Z DB td(BCLK–DB) 40ns.max 4ns.min td(DB–WR) (tcyc/2–40)ns.min 0ns.min th(WR–DB) ADi BHE 0ns.min th(WR–AD) 0ns.min th(WR–CS) tcyc Write timing td(BCLK–AD) td(BCLK–ALE) th(BCLK–ALE) tSU(DB–RD) th(BCLK-AD) td(BCLK–WR) th(BCLK–DB) td(BCLK–RD) td(BCLK–ALE) 40ns.min tac1(RD–DB) Memory Expansion Mode and Microprocessor Mode (With no wait) WR,WRL, WRH Figure 5.10.3 Timing diagram in memory expansion mode and microprocessor mode (2) |
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