STS4DPF20L datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STS4DPF20L

2/8

THERMAL DATA

(*) When Mounted on 0.5 in2 pad of 2 oz.copper

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (*)

DYNAMIC

Rthj-amb

Tstg

(*)Thermal Resistance Junction-ambient

Single Operation

Dual Operating

Thermal Operating Junction-ambient

Storage Temperature

62.5

-55 to150

-55 to 150

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

1.6

2.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 2 A

VGS = 4.5 V

ID = 2 A

0.070

0.085

0.08

0.10

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS= 15V

ID =2 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1350

490

130

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