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April 2002

STS4DPFS20L

P-CHANNEL 20V - 0.07

Ω - 4A SO-8

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION

This product associates the latest low voltage

STripFET™ in p-channel version to a low drop

Schottky diode. Such configuration is extremely ver-

satile in implementing, a large variety of DC-DC

converters for printers, portable equipment, and cel-

lular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

MAIN PRODUCT CHARACTERISTICS

MOSFET

20 V

< 0.08

Ω

4 A

SCHOTTKY

3 A

30 V

0.51 V

Symbol

Parameter

Value

Unit

20

V

20

V

Gate- source Voltage

± 16

V

4A

3.4

A

Drain Current (pulsed)

16

A

2W

Symbol

Parameter

Value

Unit

Repetitive Peak Reverse Voltage

30

V

RMS Forward Current

20

A

Average Forward Current

TL = 125°C

δ = 0.5

3A

Surge Non Repetitive Forward Current

tp = 10 ms

Sinusoidal

75

A

Repetitive Peak Reverse Current

tp = 2

µs

F = 1 kHz

1A

Non Repetitive Peak Reverse Current

tp = 100

µs1

A

dv/dt

Critical Rate Of Rise Of Reverse Voltage

10000

V/

µs

Note: For the P-CHANNEL MOSFET actual polarity of Voltages

and current has to be reversed

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INTERNAL SCHEMATIC DIAGRAM