2SD1421 datasheet(2/6 Pages) RENESAS

Part #	2SD1421

Description	Silicon NPN Epitaxial

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 6 page

2SD1421

Rev.2.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

180

—

IC = 1 mA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

160

—

IC = 10 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

—

IE = 1 mA, IC = 0

Collector cutoff current

ICBO

—

µA

VCB = 160 V, IE = 0

DC current transfer ratio

hFE1*

—

200

VCE = 5 V, IC = 0.15 A

hFE2

—

VCE = 5 V, IC = 0.5 A

Collector to emitter saturation voltage

VCE(sat)

—

1.0

IC = 0.5 A, IB = 50 mA, Pulse

Base to emitter voltage

VBE

—

0.9

VCE = 5 V, IC = 0.15 A, Pulse

Note:

1. The 2SD1421 is grouped by hFE1 as follows.

Mark

hFE1

60 to 120

100 to 200

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