2SJ79 datasheet(2/6 Pages) RENESAS

2 / 6 page

2SJ76, 2SJ77, 2SJ78, 2SJ79

Rev.2.00 Sep 07, 2005 page 2 of 5

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

2SJ76

–140

2SJ77

–160

2SJ78

–180

Drain to source voltage

2SJ79

VDSX

–200

Gate to source voltage

VGSS

±15

Drain current

–500

Body to drain diode reverse drain current

IDR

–500

Pch

1.75

Channel dissipation

Pch

Note 1

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note:

1. Value at Tc = 25

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

2SJ76

–140

—

2SJ77

–160

—

2SJ78

–180

—

Drain to source breakdown

voltage

2SJ79

V (BR) DSX

–200

—

VGS = 2 V, ID = –1 mA

Gate to source breakdown voltage

V (BR) GSS

±15

—

IG =

±10 µA, VDS = 0

Gate to source cutoff voltage

VGS (on)

–0.2

—

–1.5

ID = –10 mA, VDS = –10 V

Note 2

Drain to source saturation voltage

VDS (sat)

—

–2.0

ID = –10 mA, VGS = 0

Note 2

Forward transfer admittance

|yfs|

—

ID = –10 mA, VDS = –20 V

Note 2

Input capacitance

Ciss

—

120

—

Reverse transfer capacitance

Crss

—

4.8

—

VDS = –10 V, ID = –10 mA,

f = 1 MHz

Note:

2. Pulse test

2SJ79 Datasheet(PDF) 2 Page - Renesas Technology Corp

2SJ79 Datasheet(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL