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STP150NF55 Datasheet(PDF) 9 Page - STMicroelectronics

Part # STP150NF55
Description  N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP150NF55 Datasheet(HTML) 9 Page - STMicroelectronics

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STB150NF55 - STP150NF55 - STW150NF55
Electrical characteristics
9/19
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the allowable current in avalanche
PD(AVE) is the average power dissipation in avalanche (single pulse)
tAV is the time in avalanche
To derate above 25 °C, at fixed IAV , the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width
equal to TAV .
Figure 17. Allowable lav vs time in avalanche



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