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STB230NH03L Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB230NH03L
Description  N-channel 30V - 80A - D2PAK STripFET??Power MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB230NH03L Datasheet(HTML) 5 Page - STMicroelectronics

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STB230NH03L
Electrical characteristics
5/13
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=15V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 12)
11
322
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=15V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 12)
123
102
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
(1)
ISDM
(2)
1.
This value is silicon limited
2.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
250
1000
A
A
VSD
(3)
3.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=40A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A,
di/dt = 100A/µs,
VDD=20V, Tj=25°C
(see Figure 17)
42
34.7
1.6
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A,
di/dt = 100A/µs,
VDD=20V, Tj=150°C
(see Figure 17)
47
41.3
1.8
ns
nC
A



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