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RJL5014DPP Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJL5014DPP
Description  Silicon N Channel MOSFET High Speed Power Switching
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJL5014DPP Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJL5014DPP
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 3 of 6
Main Characteristics
20
16
12
8
4
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
1
100
10
1
10
0.1
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
02
46
8
10
100
1
10
0.1
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
−25°C
Pulse Test
VGS = 10 V
0
0.2
0.4
0.6
0.8
1.0
-25
0
50
25
75
100 125 150
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
Ta = 25
°C
1 shot
Operation in this
area is limited by
R
DS(on)
1
10
100
1000
100
10
Reverse Drain Current IDR (A)
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A /
µs
VGS = 0, Ta = 25°C
Pulse Test
5.2 V
4.8 V
4.6 V
5.0 V
V
GS = 4.4 V
5.4 V
5.6 V
5.8 V
6 V
10 V
8 V
10
µs
Pulse Test
VGS = 10 V
ID = 19 A
9.5 A
3 A



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