STTA2006PI datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VF*

Forward voltage drop

IF =20A

Tj = 25

°C

Tj = 125

°C

1.25

1.75

1.5

IR**

Reverse leakage current

VR =0.8 x

VRRM

Tj=25

°C

Tj = 125

°C

2.5

100

µA

Vto

Threshold voltage

Ip < 3.IAV

Tj = 125

°C

1.15

Dynamic resistance

Ω

Test pulse :

* tp = 380

µs, δ <2%

** tp = 5 ms,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

Value

Unit

Rth(j-c)

Junction to case thermal

resistance

SOD93

DOP3I

1.5

2.1

°C/W

Conduction power dissipation

IF(AV) = 20A

δ =0.5

SOD93

DOP3I

Tc= 96

°C

Tc= 74

°C

Pmax

Total power dissipation

Pmax = P1 + P3

(P3 = 10% P1)

SOD93

DOP3I

Tc= 90

°C

Tc= 66

°C

THERMAL AND POWER DATA

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery

time

Tj = 25

°C

IF = 0.5 A

IR = 1A

Irr = 0.25A

IF =1A dIF/dt =-50A/

µsVR =30V

IRM

Maximum reverse

recovery current

Tj = 125

°C VR = 400V IF =20A

dIF/dt = -160 A/

µs

dIF/dt = -500 A/

µs

17.5

12.5

S factor

Softness factor

Tj = 125

°CVR = 400V IF =20A

dIF/dt = -500 A/

µs

0.42

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

tfr

Forward recovery

time

Tj = 25

°C

IF =20A, dIF/dt = 160 A/

µs

measured at, 1.1

× VFmax

600

VFp

Peak forward voltage Tj = 25

°C

IF =20A, dIF/dt = 160 A/

µs12

TURN-ON SWITCHING

To evaluate the maximum conduction losses use the following equation :

P= Vto xIF(AV) +rd x IF

(RMS)

STTA2006P/PI

2/8

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