STTA6006PI datasheet(2/9 Pages) STMICROELECTRONICS

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Symbol

Parameter

Test conditions

Value

Unit

Rth(j-c)

Junction to case thermal

resistance

ISOTOP

Per diode

1.4

°C/W

Total

0.75

DOP3I

1.8

SOD93

1.2

Rth(c)

ISOTOP

Coupling

0.1

°C/W

Conduction power dissipation

IF(AV) = 30A

δ =0.5

ISOTOP

Tc= 74

°C54

DOP3I

Tc= 52

°C

SOD93

Tc= 85

°C

Pmax

Total power dissipation

Pmax = P1 + P3

(P3 = 10% P1)

ISOTOP

Tc= 66

°C60

DOP3I

Tc= 42

°C

SOD93

Tc= 78

°C

THERMAL AND POWER DATA (Per diode)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VF*

Forward voltage drop

IF =30A

Tj = 25

°C

Tj = 125

°C

1.25

1.75

1.5

IR**

Reverse leakage current

VR =0.8

VRRM

Tj=25

°C

Tj = 125

°C3

150

µA

Vto

Threshold voltage

Ip < 3.IAV

Tj = 125

°C

1.15

Dynamic resistance

Ω

Test pulses :

* tp = 380

µs, δ <2%

** tp = 5 ms,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS

To evaluate the maximum conduction losses use the following equation :

P= Vto xIF(AV) +rd x IF

(RMS)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery

time

Tj = 25

°C

IF = 0.5 A

IR = 1A

Irr = 0.25A

IF =1 A dIF/dt =-50A/

µsVR =30V

IRM

Maximum reverse

recovery current

Tj = 125

°C VR = 400V IF =30A

dIF/dt = -240 A/

µs

dIF/dt = -500 A/

µs20

S factor

Softness factor

Tj = 125

°CVR = 400V IF =30A

dIF/dt = -500 A/

µs

0.40

DYNAMIC ELECTRICAL CHARACTERISTICS

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