STTH1506TPI datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STTH1506TPI

3/5

02468

IF(AV)(A)

P(W)

δ=tp/T

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Conduction losses versus average current.

100

110

120

130

012345678

j=125°C

(Maximum values)

T =125°C

(Maximum values)

T =125°C

(Typical values)

T =25°C

(Maximum values)

VFM(V)

IFM(A)

Fig. 2: Forward voltage drop versus forward

current.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

200

400

600

800

1000

I =0.25 x I

F(AV)

dIF/dt(A/µs)

IRM(A)

V =400V

T =125°C

I =2 x I

F(AV)

I =0.5 x I

F(AV)

I=I

F(AV)

Fig. 4: Peak reverse recovery current versus dIF/dt

(90% confidence).

100

200

400

600

800

1000

dIF/dt(A/µs)

trr(ns)

V =400V

T =125°C

I =2 x I

F(AV)

I =0.5 x I

F(AV)

I=I

F(AV)

Fig. 5: Reverse recovery time versus dIF/dt (90%

confidence).

100

150

200

250

300

350

200

400

600

800

1000

dIF/dt(A/µs)

Qrr(nC)

V =400V

T =125°C

I =2 x I

F(AV)

I =0.5 x I

F(AV)

I=I

F(AV)

Fig. 6: Reverse recovery charges versus dIF/dt

(90% confidence).

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