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HS54097 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # HS54097
Description  Silicon N Channel MOSFET High Speed Power Switching
PDF  4 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HS54097 Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1669-0100 Rev.1.00 Apr 24, 2008
Page 1 of 3
HS54097
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1669-0100
Rev.1.00
Apr 24, 2008
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
1. Gate
2. Drain
3. Source
3
2
1
D
S
G
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
0.15
A
Drain peak current
ID (pulse)
Note1
0.6
A
Body-drain diode reverse drain current
IDR
0.15
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note1
0.6
A
Channel dissipation
Pch
0.75
W
Channel to ambient thermal impedance
θch-a
166.7
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%


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