HAF1002 datasheet(5/9 Pages) RENESAS

5 / 9 page

HAF1002(L), HAF1002(S)

Rev.2.00 Sep 07, 2005 page 5 of 8

0.20

0.16

0.12

0.08

0.04

–40

120

160

VGS = –4 V

–10 V

ID = –10 A

–2, –5 A

–5 A

–2 A

–10 A

–0.1 –0.2 –0.5 –1 –2

–5 –10 –20 –50

0.5

Tc = –25

°C

VDS = –10 V

Pulse Test

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

–20

–16

–12

–8

–4

–0.4

–0.8

–1.2

–1.6

–2.0

VGS = –5 V

0 V

10000

1000

100

3000

300

–10

–20

–30

–40

–50

500

–0.1 –0.2 –0.5 –1 –2

–5 –10 –20

200

100

–50

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

–0.1 –0.2 –0.5 –1 –2

–5 –10 –20

0.5

–50

100

VGS = 0

f = 1 MHz

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain Current

ID (A)

Switching Characteristics

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

td(on)

td(off)

VGS = –5 V, VDD = –30 V

PW = 300

µs, duty ≤ 1 %

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