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STTH302RL Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH302RL Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 1/5 STTH302 ® November 2001 - Ed: 1A HIGH EFFICIENCY ULTRAFAST DIODE DO-201AD STTH302 s Very low conduction losses s Negligible switching losses s Low forward and reverse recovery times s High junction temperature FEATURES AND BENEFITS The STTH302 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. DESCRIPTION Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF (AV) Average forward current TI = 107°C δ = 0.5 3A IFSM Surge non repetitive forward current tp = 10ms Sinusoidal 130 A Tstg Storage temperature range -65to+175 °C Tj Maximum operating junction temperature 175 °C ABSOLUTE RATINGS (limiting values) IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns MAIN PRODUCT CHARACTERISTICS Symbol Parameter Value Unit Rth (j-a) Junction-ambient* 25 °C/W * On infinite heatsink with 10mm lead length. THERMAL PARAMETERS |
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