HAF2017 datasheet(5/9 Pages) RENESAS

5 / 9 page

HAF2017(L), HAF2017(S)

Rev.2.00, Apr.13.2004, page 5 of 8

100

-25

100 125 150

VGS = 4.5 V

ID = 20 A

Pulse Test

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

VGS = 10 V

10 A

5 A

100

0.1

0.01

0.1

100

Tc = -25

°C

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

VDS = 10 V

Pulse Teat

0.1

0.3

100

1000

200

500

100

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

0.1

0.3

100

= 5 V, V

= 30 V

PW = 300

µs, duty < 1 %

t f

d(on)

d(off)

Drain Current

ID (A)

Switching Characteristics

0.4

0.8

1.2

1.6

2.0

VGS = 0 V

5 V

10 V

Source to Drain Voltage

VDS (V)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

10000

1000

100

010

VGS = 0

f = 1 MHz

Coss

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

di / dt = 50 A /

µs

= 0, Ta = 25

°C

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