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2SD768 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SD768
Description  Silicon NPN Epitaxial
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD768 Datasheet(HTML) 4 Page - Renesas Technology Corp

  2SD768 Datasheet HTML 1Page - Renesas Technology Corp 2SD768 Datasheet HTML 2Page - Renesas Technology Corp 2SD768 Datasheet HTML 3Page - Renesas Technology Corp 2SD768 Datasheet HTML 4Page - Renesas Technology Corp 2SD768 Datasheet HTML 5Page - Renesas Technology Corp 2SD768 Datasheet HTML 6Page - Renesas Technology Corp 2SD768 Datasheet HTML 7Page - Renesas Technology Corp  
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2SD768(K)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VI
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
—
100
µAV
CB = 120 V, IE = 0
I
CEO
——
10
µAV
CE = 100 V, RBE=∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 3 A*
1
Collector to emitter saturation
V
CE(sat)1
—
—
1.5
V
I
C = 3 A, IB = 6 mA*
1
voltage
V
CE(sat)2
—
—
3VI
C = 6A, IB = 60 mA*
1
Base to emitter saturation
V
BE(sat)1
—
—
2VI
C = 3 A, IB = 6 mA*
1
voltage
V
BE(sat)2
—
—
3.5
V
I
C = 6 A, IB = 60 mA*
1
Turn on time
t
on
—
1.0
—
µsI
C = 3 A, IB1 = –IB2 = 6 mA
Turn off time
t
off
—
3.0
—
µsI
C = 3 A, IB1 = –IB2 = 6 mA
Note:
1. Pulse test.
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
30
10
3
1.0
0.3
0.1
0.03
1
3
30
300
10
100
1,000
Collector to emitter voltage VCE (V)
iC(peak)
IC(max)
Area of Safe Operation
Ta = 25
°C
1 shot pulse
1
µs



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