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2SD768 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SD768 Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page ![]() 2SD768(K) 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 7— — VI E = 50 mA, IC = 0 Collector cutoff current I CBO — — 100 µAV CB = 120 V, IE = 0 I CEO —— 10 µAV CE = 100 V, RBE=∞ DC current transfer ratio h FE 1000 — 20000 V CE = 3 V, IC = 3 A* 1 Collector to emitter saturation V CE(sat)1 — — 1.5 V I C = 3 A, IB = 6 mA* 1 voltage V CE(sat)2 — — 3VI C = 6A, IB = 60 mA* 1 Base to emitter saturation V BE(sat)1 — — 2VI C = 3 A, IB = 6 mA* 1 voltage V BE(sat)2 — — 3.5 V I C = 6 A, IB = 60 mA* 1 Turn on time t on — 1.0 — µsI C = 3 A, IB1 = –IB2 = 6 mA Turn off time t off — 3.0 — µsI C = 3 A, IB1 = –IB2 = 6 mA Note: 1. Pulse test. Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) 30 10 3 1.0 0.3 0.1 0.03 1 3 30 300 10 100 1,000 Collector to emitter voltage VCE (V) iC(peak) IC(max) Area of Safe Operation Ta = 25 °C 1 shot pulse 1 µs |
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