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2SA1485 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SA1485
Description  Silicon PNP Epitaxial
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA1485 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SA1485
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–200
V
Collector to emitter voltage
V
CEO
–200
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–200
—
—
V
I
C = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–200
—
—
V
I
C = –0.5 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E = –10 µA, IC = 0
Collector cutoff current
I
CEO
—
—
–500
µAV
CE = –200 V, RBE = ∞
DC current transfer ratio
h
FE
100
—
250
V
CE = –12 V, IC = –2 mA*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
—
–0.5
V
I
C = –30 mA, IB = –3 mA*
1
Base to emitter voltage
V
BE
—
—
–1.0
V
V
CE = –12 V, IC = –2 mA*
1
Note:
1. Pulse test



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