STU10NB80 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	STU10NB80

Description	N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

1 / 5 page

STU10NB80

N - CHANNEL 800V - 0.65

Ω - 10A - Max220

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.65

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

INTERNAL SCHEMATIC DIAGRAM

April 1999

1

2

3

Max220

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC10

A

ID

Drain Current (continuous) at Tc = 100

oC

6.3

A

IDM(

•)

Drain Current (pulsed)

40

A

Ptot

Total Dissipation at Tc = 25

o C

160

W

Derating Factor

1.28

W/

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤10 Α, ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STU10NB80

800 V

< 0.8

Ω

10 A

1/5

Similar Part No. - STU10NB80

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STU10N60M2	1Mb / 24P	N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK 06-Dec-2013
Inchange Semiconductor ...	STU10N60M2	317Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STU10NA50	73Kb / 5P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Oct-1997
	STU10NC70Z	409Kb / 10P	N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™ II MOSFET Sep-2000
	STU10NC70ZI	409Kb / 10P	N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™ II MOSFET Sep-2000

More results

Similar Description - STU10NB80

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STB4NB80	52Kb / 6P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET Jun-1998
	STU7NA80	42Kb / 5P	N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET Jun-1998
	STU9NC80Z	407Kb / 10P	N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET Sep-2000
	STW11NB80	87Kb / 8P	N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET Jul-1999
	STW12NK80Z	299Kb / 9P	N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?줡ower MOSFET Oct-2002
	STB12NK80Z-S	212Kb / 9P	N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET Feb-2004
Unisonic Technologies	10N80	199Kb / 6P	10A, 800V N-CHANNEL POWER MOSFET
Fairchild Semiconductor	FQP8N80C	1Mb / 12P	800V N-Channel MOSFET
Nanjing International G...	NJ10N80	748Kb / 6P	10A 800V N-CHANNEL POWER MOSFET
MagnaChip Semiconductor...	MMF80R650PB	1Mb / 10P	800V 0.65ohm N-channel MOSFET

More results

STU10NB80 Datasheet(PDF) 1 Page - STMicroelectronics

STU10NB80 Datasheet(HTML) 1 Page - STMicroelectronics

Similar Part No. - STU10NB80

Similar Description - STU10NB80

Html Pages

1 2 3 4 5

Datasheet Download

Link URL