STU11NC60 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STU11NC60

Description	N-CHANNEL 600V - 0.48ohm - 11A Max220 PowerMeshII MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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June 2000

STU11NC60

N-CHANNEL 600V - 0.48

Ω - 11A Max220

PowerMesh

™II MOSFET

s

TYPICAL RDS(on) = 0.48Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™ II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLIES (UPS)

s

DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(

•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STU11NC60

600V

< 0.55

Ω

11 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20 kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC =25°C

11

A

ID

Drain Current (continuos) at TC = 100°C

8A

IDM (q)

Drain Current (pulsed)

44

A

PTOT

Total Dissipation at TC =25°C

160

W

Derating Factor

1.28

W/

°C

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤11A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

1

2

3

Max220

INTERNAL SCHEMATIC DIAGRAM

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