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STU13NC50 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STU13NC50
Description  N-CHANNEL 500V - 0.31ohm - 13A Max220 PowerMesh™ I MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU13NC50 Datasheet(HTML) 3 Page - STMicroelectronics

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STU13NC50
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 7 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
20
ns
tr
23
ns
Qg
Total Gate Charge
VDD = 400V, ID = 14 A,
VGS = 10V
75
105
nC
Qgs
Gate-Source Charge
10
nC
Qgd
Gate-Drain Charge
38
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 14 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
25
ns
tf
Fall Time
30
ns
tc
Cross-over Time
62
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
13
A
ISDM (2)
Source-drain Current (pulsed)
52
A
VSD (1)
Forward On Voltage
ISD = 14 A, VGS = 0
1.4
V
trr
Reverse Recovery Time
ISD = 14 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
670
ns
Qrr
Reverse Recovery Charge
6.7
µC
IRRM
Reverse Recovery Current
20
A
Safe Operating Area



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