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STU13NC50 Datasheet(PDF) 3 Page - STMicroelectronics |
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STU13NC50 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STU13NC50 Thermal Impedance ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 250V, ID = 7 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 20 ns tr 23 ns Qg Total Gate Charge VDD = 400V, ID = 14 A, VGS = 10V 75 105 nC Qgs Gate-Source Charge 10 nC Qgd Gate-Drain Charge 38 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 14 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 25 ns tf Fall Time 30 ns tc Cross-over Time 62 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 13 A ISDM (2) Source-drain Current (pulsed) 52 A VSD (1) Forward On Voltage ISD = 14 A, VGS = 0 1.4 V trr Reverse Recovery Time ISD = 14 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 670 ns Qrr Reverse Recovery Charge 6.7 µC IRRM Reverse Recovery Current 20 A Safe Operating Area |
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