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STU36NB20 Datasheet(PDF) 3 Page - STMicroelectronics |
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STU36NB20 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD =100 V ID =18 A RG =4.7 Ω VGS =10 V 35 40 47 55 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =160 V ID =36 A VGS =10 V 70 22 35 95 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =160 V ID =36 A RG =4.7 Ω VGS =10 V 18 22 42 24 30 57 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 36 144 A A VSD ( ∗) Forward On Voltage ISD =36 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 36 A di/dt = 100 A/ µs VDD =50 V Tj =150 oC 350 2.3 13 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STU36NB20 3/6 |
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