STU7NB100 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	STU7NB100

Description	N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STU7NB100

N - CHANNEL 1000V - 1.2

Ω - 7.3A - Max220

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.2

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

LOW INTRINSIC CAPACITANCE

s

GATE CHARGE MINIMIZED

s

REDUCED VOLTAGE SPREAD

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstand-

ing performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, exceptional avalanche and

dv/dt capabilities and unrivalled gate charge and

switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

1000

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

1000

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC7.3

A

ID

Drain Current (continuous) at Tc = 100

oC4.7

A

IDM(

•)

Drain Current (pulsed)

29

A

Ptot

Total Dissipation at Tc = 25

oC

160

W

Derating Factor

1.28

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤7.3 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STU7NB100

1000 V

< 1.5

Ω

7.3 A

March 1999

Max220

1

2

3

1/5

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