STU8NB90 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	STU8NB90

Description	N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STU8NB90

N-CHANNEL 900V - 0.7

Ω - 8.9A - Max220

PowerMESH

™ MOSFET

ADVANCE DATA

s

TYPICAL RDS(on) = 0.7

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

± 30V GATE TO SOURCE VOLTAGE RATING

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

900

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

8.9

A

ID

Drain Current (continuous) at Tc = 100

oC

5.6

A

IDM(

•)

Drain Current (pulsed)

35

A

Ptot

Total Dissipation at Tc = 25

o C

160

W

Derating Factor

1.28

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤8.9 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

December 1998

TYPE

VDSS

RDS(on)

ID

STU8NB90

900 V

< 1

Ω

8.9 A

1

2

3

Max220

1/5

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