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STU9NB80 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STU9NB80
Description  N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU9NB80 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 400 V
ID =4.6 A
RG =4.7
Ω
VGS =10 V
28
20
ns
ns
Qg
Q gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 640 V
ID =9 A
VGS =10 V
RG =4.7
Ω
VGS =10 V
53
13
25
74
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 640 V
ID =9 A
RG =4.7
Ω VGS =10 V
22
22
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
9
36
A
A
VSD (
∗)
Forward On Volt age
ISD =9 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =9.3 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
900
9.2
20
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STU9NB80
3/8



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