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STU9NC80ZI Datasheet(PDF) 1 Page - STMicroelectronics |
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STU9NC80ZI Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  1/10 Sep 2000 STU9NC80Z STU9NC80ZI N-CHANNEL 800V - 0.82 Ω - 8.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET s TYPICAL RDS(on) = 0.82Ω s EXTREMELY HIGH dv/dt CAPABILITY s GATE-TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STU9NC80Z STU9NC80ZI 800 V 800 V <0.9 Ω <0.9 Ω 8.6 A 8.6 A Symbol Parameter Value Unit STU9NC80Z STU9NC80ZI VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 800 V VGS Gate- source Voltage ±25 V ID Drain Current (continuos) at TC = 25°C 8.6 8.6(*) A ID Drain Current (continuos) at TC = 100°C 5.4 5.4(*) A IDM (1) Drain Current (pulsed) 34.4 34.4(*) A PTOT Total Dissipation at TC = 25°C 160 55 W Derating Factor 1.28 0.44 W/°C IGS Gate-source Current ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 4KV dv/dt(q) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤8.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*)Limited only by maximum temperature allowed Max220 I-Max220 1 2 3 |
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