HAT2200R

Rev.2.00, Apr.05.2004, page 2 of 7

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

100

V

Gate to source voltage

±20

V

Drain current

8A

Drain peak current

Note1

64

A

Body-drain diode reverse drain current

8A

Avalanche current

Note 2

8A

Avalanche energy

Note 2

6.4

mJ

Channel dissipation

Pch

Note3

2.5

W

Channel to Ambient Thermal Impedance

50

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg

≥ 50 Ω

3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

≤ 10s

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

100

—

—

V

Gate to source leak current

——

± 0.1

Zero gate voltage drain current

——

1

Gate to source cutoff voltage

3.5

—

5.0

V

Static drain to source on state

—22

28

m

Ω

Note4

resistance

—23

33

m

Ω

Note4

Forward transfer admittance

14

—

S

Note4

Input capacitance

Ciss

—

2300

—

pF

Output capacitance

Coss

—

280

—

pF

Reverse transfer capacitance

Crss

—

90

—

pF

f = 1 MHz

Gate Resistance

Rg

—

1.3

—

Ω

Total gate charge

Qg

—

32

—

nC

Gate to source charge

Qgs

—

12

—

nC

Gate to drain charge

Qgd

—

8

—

nC

Turn-on delay time

—16

—

ns

Rise time

—4

—

ns

≅ 30 V

Turn-off delay time

—32

—

ns

Ω

Fall time

—

4.5

—

ns

Rg = 4.7

Ω

Body–drain diode forward voltage

—

0.79

1.03

V

Note4

—

45

—

ns

diF/ dt = 100 A/ µs

Notes: 4. Pulse test