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H7N0308CF Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # H7N0308CF
Description  Silicon N Channel MOS FET High Speed Power Switching
PDF  4 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N0308CF Datasheet(HTML) 2 Page - Renesas Technology Corp

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H7N0308CF
Rev.3.00 Sep 07, 2005 page 2 of 3
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
60
A
Drain peak current
ID (pulse)
Note 1
240
A
Body-drain diode reverse drain current
IDR
60
A
Channel dissipation
Pch
Note 2
30
W
Channel to case thermal impedance
θ ch-c
4.17
°C/W
Channel to ambient thermal impedance
θ ch-a
62.5
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
—
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
Note 3
—
3.8
4.8
m
Ω
ID = 30 A, VGS = 10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
6.0
8.5
m
Ω
ID = 30 A, VGS = 4.5 V
Note 3
Forward transfer admittance
|yfs|
42
70
—
S
ID = 30 A, VDS = 10 V
Note 3
Input capacitance
Ciss
—
3350
—
pF
Output capacitance
Coss
—
840
—
pF
Reverse transfer capacitance
Crss
—
480
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
52
—
nC
Gate to source charge
Qgs
—
11
—
nC
Gate to drain charge
Qgd
—
10
—
nC
VDD = 10 V
VGS = 10 V
ID = 60 A
Turn-on delay time
td (on)
—
30
—
ns
Rise time
tr
—
370
—
ns
Turn-off delay time
td (off)
—
80
—
ns
Fall time
tf
—
27
—
ns
VGS = 10 V, ID = 30 A
RL = 0.33
Ω
Rg = 4.7
Ω
Body-drain diode forward voltage
VDF
—
0.90
—
V
IF = 60 A, VGS = 0
Body-drain diode reverse recovery time
trr
—
55
—
ns
IF = 60 A, VGS = 0
diF/dt = 50 A/
µs
Note:
3. Pulse test



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