FX6ASJ-3 datasheet(2/7 Pages) RENESAS

2 / 7 page

FX6ASJ-3

Rev.2.00

Aug 07, 2006

page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-source breakdown voltage

V(BR)DSS

–150

—

ID = –1 mA, VGS = 0 V

Gate-source leakage current

IGSS

—

±0.1

µA

VGS =

±20 V, VDS = 0 V

Drain-source leakage current

IDSS

—

–0.1

VDS = –150 V, VGS = 0 V

Gate-source threshold voltage

VGS(th)

–1.3

–1.8

–2.3

ID = –1 mA, VDS = –10 V

Drain-source on-state resistance

rDS(ON)

—

0.41

0.53

Ω

ID = –3 A, VGS = –10 V

Drain-source on-state resistance

rDS(ON)

—

0.45

0.59

Ω

ID = –3 A, VGS = – 4 V

Drain-source on-state voltage

VDS(ON)

—

–1.23

–1.59

ID = –3 A, VGS = –10 V

Forward transfer admittance

| yfs |

—

7.9

—

ID = –3 A, VDS = – 10 V

Input capacitance

Ciss

—

2420

—

Output capacitance

Coss

—

152

—

Reverse transfer capacitance

Crss

—

VDS = –10 V, VGS = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

156

—

Fall time

—

VDD = –80 V, ID = –3 A,

VGS = –10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—

–1.0

–1.5

IS = –3 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

3.57

°C/W

Channel to case

Reverse recovery time

trr

—

100

—

IS = –6 A, dis/dt = 100 A/

µs

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