AP9435GH datasheet(2/6 Pages) A-POWER

2 / 6 page

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-10A

mΩ

VGS=-4.5V, ID=-5A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-10A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=150

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=± 20V

±100

Total Gate Charge

ID=-10A

Qgs

Gate-Source Charge

VDS=-24V

1.6

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

4.3

td(on)

Turn-on Delay Time

VDS=-15V

6.3

Rise Time

ID=-10A

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-10V

Fall Time

RD=1.5Ω

7.4

Ciss

Input Capacitance

VGS=0V

570

740

Coss

Output Capacitance

VDS=-25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=-10A, VGS=0V

-1.3

trr

Reverse Recovery Time

IS=-10A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2/4

AP9435GH/J

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

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