HAT1097R datasheet(2/8 Pages) RENESAS

2 / 8 page

HAT1097R, HAT1097RJ

Rev.1.00, Feb.15.2005, page 2 of 7

Electrical Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

–60

—

ID = –10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±20

—

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

–1

µA

VDS = –60 V, VGS = 0

HAT1097R

IDSS

—

µA

Zero gate voltage

drain current

HAT1055RJ

IDSS

—

–10

µA

VDS = –48 V, VGS = 0

Ta = 125

°C

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

–1.0

—

–2.5

VDS = –10 V, ID = –1 mA

Forward transfer admittance

|yfs|

—

ID = –2.5 A

Note4, V

DS = –10 V

RDS(on)

—

Ω

ID = –2.5 A

Note4, V

GS = –10 V

Static drain to source on state

resistance

RDS(on)

—

130

Ω

ID = –2.5 A

Note4, V

GS = –4.5 V

Input capacitance

Ciss

—

1350

—

Output capacitance

Coss

—

135

—

Reverse transfer capacitance

Crss

—

VDS = –10 V, VGS = 0

f = 1 MHz

Total gate charge

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

VDD = –25 V

VGS = –10 V

ID = –5 A

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

VGS = –10 V, ID= –2.5 A

VDD

≅ –30 V

RL = 12

Ω

RG = 4.7

Ω

Body-drain diode forward voltage

VDF

—

–0.85

–1.10

IF = –5 A, VGS = 0

Note4

Body-drain diode reverse recovery

time

trr

—

IF = –5 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 4. Pulse test

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