H7P1002DL datasheet(3/9 Pages) RENESAS

3 / 9 page

H7P1002DL, H7P1002DS

REJ03G1601-0100 Rev.1.00 Nov 16, 2007

Page 3 of 8

Main Characteristics

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

–20

–5

–10

–15

–2

–4–6–8

–10

–20

–5

–10

–15

0–1

–2

–3

–4

–5

Tc = 75°C

050

100

125

150

VDS = –10 V

Pulse Test

–10 V

–5 V

–8 V

–4 V

–3.5 V

–3 V

VGS = –2 V

Pulse Test

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

–10

–0.3

–1

–30

–3

–0.1

–0.03

–0.01

–0.1 –0.3 –1

–3

–30

–10

–300

–100

–1000

–100

Ta = 25°C

shot)

Operation

(Tc

= 25

°C)

100

µs

Operation in

this area is

limited by RDS (on)

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–1.2

–0.2

–0.4

–0.6

–0.8

–1.0

0–4

–8

–12

–16

–20

Pulse Test

ID = –10 A

–5 A

–2 A

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

200

100

–2

–20

–50

–1

–10

–5

–100

1000

500

VGS = –4 V

–10 V

Pulse Test

–25°C

25°C

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