HAT2038R, HAT2038RJ

Rev.5.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

60

V

Gate to source voltage

±20

V

Drain current

5

A

Drain peak current

Note 1

40

A

Body-drain diode reverse drain current

5

A

HAT2038R

—

—

Avalanche current

HAT2038RJ

Note 4

5

A

HAT2038R

—

—

Avalanche energy

HAT2038RJ

Note 4

2.14

mJ

Channel dissipation

Pch

Note 2

2

W

Channel dissipation

Pch

Note 3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

4. Value at Tch = 25

°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

60

—

—

V

Gate to source breakdown voltage

±20

—

—

V

Gate to source leak current

—

—

±10

µA

HAT2038R

—

—

1

µA

Zero gate voltage drain

current

HAT2038RJ

—

—

0.1

µA

HAT2038R

—

—

—

µA

Zero gate voltage drain

current

HAT2038RJ

—

—

10

µA

Ta = 125

°C

Gate to source cutoff voltage

1.2

—

2.2

V

—

0.043

0.058

Ω

Note 5

Static drain to source on state resistance

—

0.056

0.084

Ω

Note 5

Forward transfer admittance

6

9

—

S

Note 5

Input capacitance

Ciss

—

520

—

pF

Output capacitance

Coss

—

270

—

pF

Reverse transfer capacitance

Crss

—

100

—

pF

f = 1 MHz

Turn-on delay time

—

11

—

ns

Rise time

—

40

—

ns

Turn-off delay time

—

110

—

ns

Fall time

—

80

—

ns

≅ 30 V

Body-drain diode forward voltage

—

0.84

1.1

V

Note 5

Body-drain diode reverse recovery time

—

40

—

ns

µs

Note:

5. Pulse test