HAT2096H datasheet(2/7 Pages) RENESAS

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HAT2096H

Rev.4.00 Sep 07, 2005 page 2 of 6

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

Gate to source voltage

VGSS

±20

Drain current

Drain peak current

ID (pulse)

Note 1

160

Body-drain diode reverse drain current

IDR

Channel dissipation

Pch

Note 2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Tc = 25

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG =

±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

µA

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS (off)

1.0

—

2.5

VDS = 10 V, ID = 1 mA

RDS (on)

—

4.2

5.3

Ω

ID = 20 A, VGS = 10 V

Note 3

Static drain to source on state resistance

RDS (on)

—

7.0

Ω

ID = 20 A, VGS = 4.5 V

Note 3

Forward transfer admittance

|yfs|

—

ID = 20 A, VDS = 10 V

Note 3

Input capacitance

Ciss

—

2200

—

Output capacitance

Coss

—

600

—

Reverse transfer capacitance

Crss

—

330

—

VDS = 10 V

VGS = 0

f = 1 MHz

Total gate charge

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

VDD = 10 V

VGS = 10 V

ID = 40 A

Turn-on delay time

td (on)

—

Rise time

—

Turn-off delay time

td (off)

—

Fall time

—

VGS = 10 V, ID = 20 A

VDD

≅ 10 V

RL = 0.5

Ω

Rg = 4.7

Ω

Body-drain diode forward voltage

VDF

—

0.85

1.11

IF = 40 A, VGS = 0

Note 3

Body-drain diode reverse recovery time

trr

—

IF = 40 A, VGS = 0

diF/dt = 50 A/

µs

Note:

3. Pulse test

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