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HAT2099H Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HAT2099H
Description  Silicon N Channel Power MOS FET Power Switching
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2099H Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAT2099H
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
50
A
Drain peak current
ID (pulse)
Note 1
200
A
Body-drain diode reverse drain current
IDR
50
A
Avalanche current
IAP
Note 3
5
A
Avalanche energy
EAR
Note 3
2.5
mJ
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
—
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
RDS (on)
—
2.9
3.7
m
Ω
ID = 25 A, VGS = 10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
5.0
7.3
m
Ω
ID = 25 A, VGS = 4.5 V
Note 4
Forward transfer admittance
|yfs|
39
65
—
S
ID = 25 A, VDS = 10 V
Note 4
Input capacitance
Ciss
—
4750
—
pF
Output capacitance
Coss
—
1180
—
pF
Reverse transfer capacitance
Crss
—
650
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
75
—
nC
Gate to source charge
Qgs
—
16
—
nC
Gate to drain charge
Qgd
—
14
—
nC
VDD = 10 V
VGS = 10 V
ID = 50 A
Turn-on delay time
td (on)
—
26
—
ns
Rise time
tr
—
60
—
ns
Turn-off delay time
td (off)
—
85
—
ns
Fall time
tf
—
26
—
ns
VGS = 10 V, ID = 25 A
VDD
≅ 10 V
RL = 0.4
Ω
Rg = 4.7
Ω
Body-drain diode forward voltage
VDF
—
0.85
0.98
V
IF = 50 A, VGS = 0
Note 4
Body-drain diode reverse recovery time
trr
—
60
—
ns
IF = 50 A, VGS = 0
diF/dt = 50 A/
µs
Note:
4. Pulse test



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