HAT2108R

Rev.5.00 Sep 07, 2005 page 2 of 3

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

28

V

Gate to source voltage

±12

V

Drain current

11

A

Drain peak current

Note 1

88

A

Body-drain diode reverse drain current

11

A

Channel dissipation

Pch

Note 2

2

W

Channel dissipation

Pch

Note 3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

28

—

—

V

Gate to source breakdown voltage

±12

—

—

V

Gate to source leak current

—

—

±10

µA

Zero gate voltage drain current

—

—

1

µA

Gate to source cutoff voltage

0.4

—

1.4

V

—

12

15

m

Ω

Note 4

Static drain to source on state resistance

—

15

22

m

Ω

Note 4

Forward transfer admittance

17

28

—

S

Note 4

Input capacitance

Ciss

—

2200

—

pF

Output capacitance

Coss

—

400

—

pF

Reverse transfer capacitance

Crss

—

240

—

pF

f = 1 MHz

Total gate charge

Qg

—

16

—

nC

Gate to source charge

Qgs

—

5.2

—

nC

Gate to drain charge

Qgd

—

4.8

—

nC

Turn-on delay time

—

30

—

ns

Rise time

—

35

—

ns

Turn-off delay time

—

70

—

ns

Fall time

—

25

—

ns

≅ 10 V

Ω

Rg = 4.7

Ω

Body-drain diode forward voltage

—

0.85

1.11

V

Note 4

Body-drain diode reverse recovery time

—

40

—

ns

µs

Note:

4. Pulse test