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STW10NB60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW10NB60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STW10NB60 N - CHANNEL 600V - 0.69 Ω - 10A - TO-247 PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.69 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s HIGH CURRENT, HIGH SPEED SWITCHING ® INTERNAL SCHEMATIC DIAGRAM October 1998 1 2 3 TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain- gate Voltage (RGS =20 k Ω) 600 V VGS G ate-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC10 A ID Drain Current (continuous) at Tc =100 oC6.2 A IDM ( •) Drain Current (pulsed) 40 A Ptot T otal Dissipat ion at Tc =25 oC 160 W Derating Factor 1.28 W / o C dv/dt( 1) Peak Diode Recovery voltage slope 4.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST W10NB60 600 V < 0.8 Ω 10 A 1/8 |
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