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BB304C Datasheet(PDF) 1 Page - Renesas Technology Corp |
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BB304C Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 10 page ![]() Rev.6.00 Aug 10, 2005 page 1 of 9 BB304C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0826-0600 (Previous ADE-208-606D) Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 1. Source 2. Gate1 3. Gate2 4. Drain 1 4 3 2 Notes: 1. Marking is “DW –”. 2. BB304C is individual type number of RENESAS BBFET. |
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