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STW10NC60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW10NC60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  1/9 February 2002 STW10NC60 STH10NC60FI N-CHANNEL 600V - 0.6 Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET (1)ISD ≤10A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Temperature Allowed s TYPICAL RDS(on) = 0.6 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area . TYPE VDSS RDS(on) ID STW10NC60 STH10NC60FI 600 V 600 V < 0.75 Ω < 0.75 Ω 10 A 10 A (*) Symbol Parameter Value Unit STW10NC60 STH10NC60FI VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 10 10 (*) A ID Drain Current (continuous) at TC = 100°C 6.3 6.3 (*) A IDM (1) Drain Current (pulsed) 40 40 (*) A PTOT Total Dissipation at TC = 25°C 160 60 W Derating Factor 1.28 0.48 W/°C dv/dt Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature – 55 to 150 °C Tj Max. Operating Junction Temperature TO-247 ISOWATT218 1 2 3 1 2 3 INTERNAL SCHEMATIC DIAGRAM |
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