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STW12NB60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW12NB60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  1/8 May 2001 STW12NB60 N-CHANNEL 600V - 0.5 Ω - 12A TO-247 PowerMesh™II MOSFET s TYPICAL RDS(on) = 0.5Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS TYPE VDSS RDS(on) ID STW12NB60 600V < 0.6 Ω 12 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 12 A ID Drain Current (continuos) at TC = 100°C 7.56 A IDM (q) Drain Current (pulsed) 48 A PTOT Total Dissipation at TC = 25°C 190 W Derating Factor 1.52 W/°C dv/dt(1) Peak Diode Recovery voltage slope 4 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤12A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TO-247 1 2 3 INTERNAL SCHEMATIC DIAGRAM |
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