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STW12NC60 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW12NC60
Description  N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NC60 Datasheet(HTML) 1 Page - STMicroelectronics

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June 2000
STW12NC60
N-CHANNEL 600V - 0.48
Ω - 12A TO-247
PowerMesh
™II MOSFET
s
TYPICAL RDS(on) = 0.48Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
(
•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STW12NC60
600V
< 0.55
12 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS =20 kΩ)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC =25°C
12
A
ID
Drain Current (continuos) at TC = 100°C
8A
IDM (q)
Drain Current (pulsed)
18
A
PTOT
Total Dissipation at TC =25°C
190
W
Derating Factor
1.52
W/
°C
dv/dt(1)
Peak Diode Recovery voltage slope
3
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤11A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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