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STW13NB60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW13NB60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48 Ω - 13A - TO-247/ISOWATT218 PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.48 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM January 2000 TO-247 ISOWATT218 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STW 13NB60 STH13NB60FP VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain- gate Volt age (RGS =20 k Ω) 600 V VGS G ate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC13 8.6 A ID Drain Current (continuous) at Tc =100 oC8.2 5.4 A IDM ( •) Drain Current (pulsed) 52 52 A Ptot T otal Dissipation at Tc =25 oC 190 80 W Derating Factor 1.52 0.64 W / o C dv/dt (1) Peak Diode Recovery volt age slope 4 4 V/ns VISO I nsulat ion W ithstand Voltage (DC) 2000 V Tstg Storage Temperat ure -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST W13NB60 ST H13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A 1 2 3 1 2 3 1/9 |
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