HAT1038R, HAT1038RJ

Rev.5.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

–60

V

Gate to source voltage

±20

V

Drain current

–3.5

A

Drain peak current

Note 1

–28

A

Body-drain diode reverse drain current

–3.5

A

HAT1038R

—

—

Avalanche current

HAT1038RJ

Note 4

–3.5

A

HAT1038R

—

—

Avalanche energy

HAT1038RJ

Note 4

1.05

mJ

Channel dissipation

Pch

Note 2

2

W

Channel dissipation

Pch

Note 3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

4. Value at Tch = 25

°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

–60

—

—

V

Gate to source leak voltage

±20

—

—

V

Gate to source leak current

—

—

±10

µA

HAT1038R

—

—

–1

µA

Zero gate voltage drain

current

HAT1038RJ

—

—

–0.1

µA

HAT1038R

—

—

—

µA

Zero gate voltage drain

current

HAT1038RJ

—

—

–10

µA

Ta = 125

°C

Gate to source cutoff voltage

–1.2

—

–2.2

V

—

0.12

0.15

Ω

Note 5

Static drain to source on state resistance

—

0.16

0.23

Ω

Note 5

Forward transfer admittance

3

4.5

—

S

Note 5

Input capacitance

Ciss

—

600

—

pF

Output capacitance

Coss

—

290

—

pF

Reverse transfer capacitance

Crss

—

75

—

pF

f = 1 MHz

Turn-on delay time

—

11

—

ns

Rise time

—

30

—

ns

Turn-off delay time

—

100

—

ns

Fall time

—

55

—

ns

≅ –30 V

Body-drain diode forward voltage

—

–0.98

–1.28

V

Note 5

Body-drain diode reverse recovery time

—

70

—

ns

µs

Note:

5. Pulse test