STW16NA60

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s

Ω

s

± 30V GATE TO SOURCE VOLTAGE

RANTING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

s

LOW INTRINSIC CAPACITANCE

s

GATE CHARGE MINIMIZED

s

REDUCED VOLTAGE SPREAD

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

CONSUMER AND INDUSTRIAL LIGHTING

s

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

600

V

Ω)

600

V

Gate-source Voltage

± 30

V

A

A

•)

Drain Current (pulsed)

64

A

250

W

Derating Factor

2

W/

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

This is preliminary information on a new product now in development or undergoing evaluation.Details are subject to change without notice.

TYPE

STW16NA60

600 V

< 0.4

Ω

16 A

January 1998

TO-247

1

2

3

1/5